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BUL45 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
BUL45
Iscsemi
Inchange Semiconductor Iscsemi
BUL45 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Fast switching speed
·High voltage
APPLICATIONS
·Designed for use in electronic ballast
and In switchmode power supplies
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Product Specification
BUL45
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current (peak)
IB
Base current
Ptot
Total power dissipation
Tj
Max.operating junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
VALUE
700
400
9
5
10
2
75
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.65
UNIT
/W

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