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BUK9605-30A Datasheet PDF : 13 Pages
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Nexperia
BUK9605-30A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain[1]
S
source
D
mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9605-30A
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
VGSM
peak gate-source voltage
Source-drain diode
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 100 °C
Tmb = 25 °C
Tmb = 25 °C; pulsed
Tmb = 25 °C
pulsed; tp ≤ 50 µs
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 75 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Max Unit
-
30 V
-
30 V
-10 10 V
-
75 A
-
75 A
-
400 A
-
230 W
-55 175 °C
-55 175 °C
-15 15 V
-
75 A
-
240 A
-
500 mJ
BUK9605-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2011
© Nexperia B.V. 2017. All rights reserved
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