BUK7615-100A/T3 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BUK7615-100A/T3 Datasheet PDF : 7 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7615-100A
11
10
9
8
7
6
5
Ciss
4
3
2
1
0
0.01
0.1
1 VDS/V 10
Coss
Crss
100
Fig.13. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12
VGS/V
10
8
VDS = 14V
80V
6
4
2
0
0
20
40
60
80
100
120
QG/nC
Fig.14. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 25 A; parameter VDS
100
ID/A
80
60
Tj/C = 175
25
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSDS/V
Fig.15. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.16. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.17. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
+ VDD
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.18. Switching test circuit.
January 1999
5
Rev 1.000
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