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BU406

NPN Epitaxial Silicon Transistor

Tiger Electronic 

TIGER ELECTRONIC CO.,LTD

Product specification

NPN Epitaxial Silicon Transistor

BU406

High Voltage Switching

* Use In Horizontal Deflection Output Stage

Absolute Maximum Ratings ( Ta = 25 )

Parameter

Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Dissipation at

Max. Operating Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

IC

IB

Ptot

Tj

Tstg

400 V

200 V

6

V

7.0 A

4.0 A

60 W

150 oC

-55~150 oC

TO-220

Electrical Characteristics ( Ta = 25 )

Parameter

Symbol

Test Conditions

Collector Cut-off Current

ICES VCE=400V, IE=0

VCE=250V, IE=0

Emitter Cut-off Current

Collector-Emitter Sustaining Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Turn Off Time

IEBO

VCEO

hFE(1)

VCE(sat)

VBE(sat)

fT

tOFF

VEB=6V, IC=0

IC=50mA, IB=0

VCE=4V, IC=1.0A

IC=5.0A,IB=0.5A

IC=5.0A,IB=0.5A

VCE=10V, IC=0.5A

IC=5A, IB=0.5A

Min.

200

10

10

Typ. Max. Unit

5.0

mA

0.1

1.0 mA

V

1.0 V

1.2 V

MHz

0.75 us

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