BTS707 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BTS707 Datasheet PDF : 12 Pages
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BTS 707
GND disconnect
Inductive load switch-off energy
dissipation
E bb
IN
Vbb
PROFET OUT
IN
Vbb
E AS
ELoad
Vbb VIN VST
ST
GND
VGND
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
GND disconnect with GND pull up
IN
Vbb
PROFET OUT
ST
GND
PROFET OUT
=
ST
GND
L
{Z L
EL
ER
RL
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
∫ EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Vbb
VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load
high
IN
Vbb
PROFET OUT
ST
GND
Vbb
For an inductive load current up to the limit defined by EAS
(max. ratings ) each switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.
Semiconductor Group
8
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