BTS650PE3180A Ver la hoja de datos (PDF) - Siemens AG

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Fabricante

BTS650PE3180A

Smart Highside High Current Power Switch

Siemens AG 

Parameter and Conditions

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

Symbol

Protection Functions

Short circuit current limit (Tab to pins 1,2,6,7)

VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:

Tc =25°C:

Tc =+150°C:

Short circuit shutdown delay after input current

positive slope, VON > VON(SC)

min. value valid only if input "off-signal" time exceeds 30 µs

Output clamp 16)

(inductive load switch off)

IL= 40 mA:

see diagram Ind. and overvolt. output clamp page 8

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) (e.g. overvoltage)

IL= 40 mA

Short circuit shutdown detection voltage

(pin 4 to pins 1,2,6,7)

Thermal overload trip temperature

Thermal hysteresis

IL(SC)

IL(SC)

IL(SC)

td(SC)

-VOUT(CL)

VON(CL)

VON(SC)

Tjt

∆Tjt

Reverse Battery

Reverse battery voltage 17)

On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 °C:

Vbb = -12V, VIN= 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C:

Integrated resistor in Vbb line

-Vbb

RON(rev)

Rbb

BTS650P

Values

Unit

min typ max

-- 110 --

A

-- 130 180

65 115 --

80

-- 350 µs

14 16.5 20 V

39 42 47 V

--

6

150

--

-- 10

-- V

-- °C

-- K

--

-- 32 V

-- 5.4 7.0 mΩ

8.9 12.3

-- 120

-- Ω

)16 This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode

is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.

)17 The reverse load current through the intrinsic drain-source diode has to be limited by the connected load

(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power

transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the

intrinsic drain-source diode. The temperature protection is not active during reverse current operation!

Increasing reverse battery voltage capability is simply possible as described on page 9.

Semiconductor Group

Page 5

1998-Nov.-2

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