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BTS550P Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción
Fabricante
BTS550P
Infineon
Infineon Technologies Infineon
BTS550P Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
Junction - ambient (free air): RthJA
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 8)
IL = 20 A, Tj = 25 °C: RON
VIN = 0, IL = 20 A, Tj = 150 °C:
IL = 120 A, Tj = 150 °C:
Vbb = 6V8), IL = 20 A, Tj = 150 °C:
Nominal load current9) (Tab to pins 1,5)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Maximum load current in resistive range
(Tab to pins 1,5)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 12
VON = 1.8 V, Tc = 150 °C:
Turn-on time11)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 , Tj =-40...+150°C
Slew rate on 11) (10 to 30% VOUT )
RL = 1 ,Tj =25°C
Slew rate off 11) (70 to 40% VOUT )
RL = 1 ,Tj =25°C
RON(Static)
IL(ISO)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
Data Sheet BTS550P
Values
Unit
min typ max
--
-- 0.35 K/W
-- 30
--
Values
Unit
min typ max
-- 2.8
5.0
--
--
7
90 115
3.6 m
6.5
6.5
10
-- A
390
--
--
215
--
-- A
120 250 600 µs
40 90 150
0.2 0.5 0.8 V/µs
0.2 0.6
1 V/µs
7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
8) Decrease of Vbb below 10 V causes a slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
9) not subject to production test, specified by design
10) TJ is about 105°C under these conditions.
11) See timing diagram on page 13.
Infineon Technologies AG
3
2003-Oct-01

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