BTS5210G Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BTS5210G

Smart High-Side Power Switch Two Channels: 2 x 140mΩ Status Feedback

Infineon Technologies 

Thermal Characteristics

Parameter and Conditions

Symbol

Thermal resistance

junction - soldering point6)7)

junction – ambient6)

@ 6 cm2 cooling area

each channel:

one channel active:

all channels active:

Rthjs

Rthja

Electrical Characteristics

Parameter and Conditions, each of the four channels

at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified

Symbol

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT); IL = 2 A

each channel, Tj = 25°C: RON

Tj = 150°C:

two parallel channels, Tj = 25°C:

see diagram, page 11

Nominal load current

one channel active: IL(NOM)

two parallel channels active:

Device on PCB6), Ta = 85°C, Tj ≤ 150°C

Output current while GND disconnected or pulled up8); IL(GNDhigh)

Vbb = 32 V, VIN = 0,

see diagram page 9

Turn-on time9)

IN

to 90% VOUT: ton

Turn-off time

IN

to 10% VOUT: toff

RL = 12 Ω

Slew rate on 9)

Slew rate off 9)

10 to 30% VOUT, RL = 12 Ω: dV/dton

70 to 40% VOUT, RL = 12 Ω: -dV/dtoff

BTS 5210G

Values

Unit

min typ max

--

-- 15 K/W

--

--

--

-- 45

--

-- 40

--

Values

Unit

min typ max

-- 110 140 mΩ

-- 210 280

-- 55 70

1.8 2.4

3.4 3.9

-- A

--

--

2 mA

-- 100 250 µs

-- 100 270

0.2

-- 1.0 V/µs

0.2

-- 1.1 V/µs

6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air. See page 14

7) Soldering point: upper side of solder edge of device pin 15. See page 14

8) not subject to production test, specified by design

9) See timing diagram on page 12.

Infineon Technologies AG

5

2003-Oct-01

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