BTS412B2 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BTS412B2 Datasheet PDF : 14 Pages
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Vbb disconnect with charged external
inductive load
S
3
high
IN
Vbb
2
PROFET
OUT
5
D
ST
4
GND
1
Vbb
BTS 412B2
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
L [mH]
10000
1000
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
100
Inductive Load switch-off energy
dissipation
E bb
E AS
IN
Vbb
PROFET OUT
=
ST
GND
L
{Z L RL
10
ELoad
1
1
2
3
4
5
6
EL
IL [A]
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
ER
ZthJC [K/W]
10
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
∫ EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
2IL·R· LL·(Vbb
+
|VOUT(CL)|)·
ln
(1+
IL·RL
|VOUT(CL)|
)
1
D=
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
tp [s]
Semiconductor Group
8
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