BT150 Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
Fabricante
BT150 Datasheet PDF : 5 Pages
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UTC BT150
THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to mounting base
Thermal resistance Junction to ambient In free air
SYMBOL
Rth j-mb
Rth j-a
MIN
TYP
60
MAX
2.5
UNIT
K/W
K/W
STATIC CHARACTERISTICS(Tj=25°C,unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
Gate trigger current
IGT
VD = 12 V; IT = 0.1 A
Latching current
IL
VD = 12 V; IGT = 0.1 A
Holding current
IH
VD = 12 V; IGT = 0.1 A
On-state voltage
VT
IT = 5 A
Gate trigger voltage
VGT
VD = 12 V; IT = 0.1 A
VD = VDRM(max) ; IT = 0.1 A; Tj = 110 °C
Off-state leakage current
ID , IR
VD = VDRM(max) ; VR = VRRM(max) ;
Tj = 125 °C
MIN TYP MAX UNIT
15 200 mA
0.17 10 mA
0.10 6
MA
1.23 1.8 V
0.4 1.5
0.1 0.2
V
0.1 0.5 mA
DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
Critical rate of rise of
off-state voltage
dVD /dt
VDM = 67% VDRM(max) ; Tj = 125 °C;
exponential waveform; RGK = 100Ω
Gate controlled turn-on
time
tgt
ITM = 10 A; VD = VDRM(max) ; IG = 5mA;
dIG /dt = 0.2A/µs
Circuit commutated
Turn-off time
VD = 67% VDRM(max) ; Tj = 125 °C;
tq
ITM = 8A; VR = 10V; dITM /dt = 10 A/μs;
dVD /dt = 2V/μs; RGK = 1kΩ
MIN TYP MAX UNIT
50
V/µs
2
µs
100
µs
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R301-008,B
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