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BT138 Datasheet PDF : 12 Pages
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NXP Semiconductors
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter
Conditions
dVD/dt
tgt
rate of rise of off-state voltage VDM = 0.67 × VDRM(max);
exponential waveform;
gate open circuit;
Tj = 110 °C
gate-controlled turn-on time
ITM = 16 A;
VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
BT138-600D
Min Typ Max
-
50 -
BT138-600E
BT138-800E
Min Typ Max
-
150 -
Unit
V/µs
-
2
-
-
2
-
µs
1.6
VGT
VGT(25°C)
1.2
0.8
0.4
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3
IGT
IGT(25°C)
(1)
(2)
2
(3)
(4)
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(1)
(2)
(3)
1
(4)
0
−60
−10
40
90
140
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−60
−10
40
90
140
Tj (°C)
(1) T2− G+
(2) T2− G−
(3) T2+ G−
(4) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BT138_SER _D_E_2
Product data sheet
Rev. 02 — 12 March 2008
© NXP B.V. 2008. All rights reserved.
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