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BT138 Datasheet PDF : 12 Pages
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NXP Semiconductors
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
6. Static characteristics
Table 5. Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
IGT
gate trigger current VD = 12 V; IT = 0.1 A;
see Figure 8
T2+ G+
T2+ G−
T2− G−
T2− G+
IL
latching current
VD = 12 V; IG = 0.1 A;
see Figure 10
T2+ G+
T2+ G−
T2− G−
T2− G+
IH
holding current
VD = 12 V; IG = 0.1 A;
see Figure 11
VT
on-state voltage
IT = 15 A; see Figure 9
VGT
gate trigger voltage IT = 0.1 A; see Figure 7
VD = 12 V;
VD = VDRM; Tj = 125 °C
ID
off-state current
VD = VDRM(max);
Tj = 125 °C
BT138-600D
Min Typ
-
1.3
-
2.8
-
3.2
-
5.5
-
-
-
-
-
-
-
-
-
-
-
1.4
-
0.7
0.25 0.4
-
0.1
BT138-600E
BT138-800E
Max Min Typ
5
-
2.5
5
-
4.0
5
-
5.0
10
-
11
15
-
-
20
-
-
15
-
-
20
-
-
10
-
-
1.65 -
1.4
1.5
-
0.7
-
0.25 0.4
0.5
-
0.1
Unit
Max
10
mA
10
mA
10
mA
25
mA
30
mA
40
mA
30
mA
40
mA
30
mA
1.65 V
1.5
V
-
V
0.5
mA
BT138_SER _D_E_2
Product data sheet
Rev. 02 — 12 March 2008
© NXP B.V. 2008. All rights reserved.
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