BT138 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BT138 Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
Table 3. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
dIT/dt
rate of rise of on-state current
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min
Max Unit
-
50
A/µs
-
50
A/µs
-
50
A/µs
-
10
A/µs
-
2
A
-
5
W
-
0.5
W
−40
+150 °C
-
125
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
20
Ptot
(W)
conduction form
angle factor
(degrees) a
30
4
15
60
2.8
90
2.2
α
120
1.9
180
1.57
10
003aac220
α = 180°
120°
90°
60°
30°
5
0
0
2
4
6
8
10
12
14
IT(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
BT138_SER _D_E_2
Product data sheet
Rev. 02 — 12 March 2008
© NXP B.V. 2008. All rights reserved.
3 of 12
Share Link: 