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Fabricante

S138

Direct Logic-Level Interface: TTL/CMOS

Silikron Semiconductor Co.,LTD. 

BSS138

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BVDSS

IDSS

VGS=0V ID=250μA

VDS=50V,VGS=0V

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

Gate-Source Breakdown Voltage

ON CHARACTERISTICS (Note 3)

BVGSO

VDS=0V, IG=±250uA

Gate Threshold Voltage

Drain-Source On-State Resistance

VGS(th)

RDS(ON)

VDS=VGS,ID=250uA

VGS=10V, ID=0.22A

VGS=4.5V, ID=0.22A

Forward Transconductance

DYNAMIC CHARACTERISTICS (Note4)

gFS

VDS=10V,ID=0.22A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Clss

Coss

Crss

VDS=25V,VGS=0V,

F=1.0MHz

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

Turn–On Rise Time

Turn-Off Delay Time

tr

td(off)

VDD=30V,VGS=10V,

RGEN=6Ω，ID=0.22A

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

tf

Qg

Qgs

VDS=25V,ID=0.22A,VGS=10V

Gate–Drain Charge

Qgd

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=0.44A

Min

50

±20

0.8

Typ

0.1

30

15

6

2.6

9

20

6

1.7

0.1

0.4

Max

1

10

1.5

3.5

6

2.4

1.4

Unit

V

μA

uA

V

V

Ω

S

PF

nS

nC

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

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