C67076-A2011-A70 Ver la hoja de datos (PDF) - eupec GmbH

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componentes Descripción

Fabricante

C67076-A2011-A70

IGBT Power Module

eupec GmbH 

BSM 75 GAL 120 DN2

IGBT Power Module

• Single switch with chopper diode at collector

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

VCE IC

Package

Ordering Code

BSM 75 GAL 120 DN2 1200V 105A HALF BRIDGE GAL 1 C67076-A2011-A70

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

RGE = 20 kΩ

Gate-emitter voltage

DC collector current

TC = 25 °C

TC = 80 °C

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 80 °C

Power dissipation per IGBT

TC = 25 °C

Chip temperature

Storage temperature

Symbol

VCE

VCGR

VGE

IC

ICpuls

Ptot

Tj

Tstg

Values

Unit

1200

V

1200

± 20

A

105

75

210

150

W

625

+ 150

°C

-40 ... + 125

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

RthJC

RthJCD

RTHJCDC

Vis

-

-

-

-

≤ 0.2

K/W

≤ 0.5

≤ 0.36

2500

Vac

20

mm

11

F

sec

40 / 125 / 56

1

Nov-24-1997

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