BSM200GT120DN2 Ver la hoja de datos (PDF) - Siemens AG

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BSM200GT120DN2

IGBT Power Module

Siemens AG 

BSM 200 GT 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 600 V, VGE = 15 V, IC = 200 A

RGon = 4.7 Ω

-

180

Rise time

tr

VCC = 600 V, VGE = 15 V, IC = 200 A

RGon = 4.7 Ω

-

80

Turn-off delay time

td(off)

VCC = 600 V, VGE = -15 V, IC = 200 A

RGoff = 4.7 Ω

-

750

Fall time

tf

VCC = 600 V, VGE = -15 V, IC = 200 A

RGoff = 4.7 Ω

-

70

ns

350

160

950

100

Free-Wheel Diode

Diode forward voltage

VF

IF = 200 A, VGE = 0 V, Tj = 25 °C

-

IF = 200 A, VGE = 0 V, Tj = 125 °C

-

Reverse recovery time

trr

IF = 200 A, VR = -600 V, VGE = 0 V

diF/dt = -2000 A/µs, Tj = 125 °C

-

Reverse recovery charge

Qrr

IF = 200 A, VR = -600 V, VGE = 0 V

diF/dt = -2000 A/µs

Tj = 25 °C

-

Tj = 125 °C

-

V

2.3

2.8

1.8

-

ns

400

-

µC

12

-

36

-

Semiconductor Group

3

Aug-23-1996

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