BSM15GD60DN2 Ver la hoja de datos (PDF) - Siemens AG

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BSM15GD60DN2

IGBT Power Module

Siemens AG 

BSM 15 GD 60 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 300 V, VGE = 15 V, IC = 15 A

RGon = 68 Ω

-

35

Rise time

tr

VCC = 300 V, VGE = 15 V, IC = 15 A

RGon = 68 Ω

-

50

Turn-off delay time

td(off)

VCC = 300 V, VGE = -15 V, IC = 15 A

RGoff = 68 Ω

-

250

Fall time

tf

VCC = 300 V, VGE = -15 V, IC = 15 A

RGoff = 68 Ω

ns

70

100

370

nS

Free-Wheel Diode

Diode forward voltage

IF = 15 A, VGE = 0 V, Tj = 25 °C

IF = 15 A, VGE = 0 V, Tj = 125 °C

Reverse recovery time

IF = 15 A, VR = -300 V, VGE = 0 V

diF/dt = -150 A/µs, Tj = 125 °C

Reverse recovery charge

IF = 15 A, VR = -300 V, VGE = 0 V

diF/dt = -150 A/µs

Tj = 25 °C

Tj = 125 °C

VF

-

-

trr

-

Qrr

-

-

V

1.6

-

1.9

-

µs

0.11 -

µC

0.4

-

0.9

-

Semiconductor Group

3

Jan-09-1997

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