BSM100GB170DN2 Ver la hoja de datos (PDF) - Siemens AG
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BSM100GB170DN2 Datasheet PDF : 9 Pages
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BSM 100 GB 170 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 15 Ω
10 4
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 100 A
10 4
ns
t
10 3
10 2
ns
tdoff
t
10 3
tdoff
tdon
tdon
tr
tr
10 2
tf
tf
10 1
0
50
100
150
A
250
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 15 Ω
200
mWs
E 160
Eon
140
120
100
80
60
Eoff
40
20
0
0
50
100
150
A
250
IC
10 1
0
20
40
60
80
Ω 120
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 100 A
200
mWs
E 160
140
120
Eon
100
80
60
40
Eoff
20
0
0
20
40
60
80
Ω 120
RG
Semiconductor Group
7
Aug-01-1996
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