C67076-A2012-A70 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

C67076-A2012-A70

IGBT Power Module

Siemens AG 

BSM 100 GAL 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Chopper Diode

Chopper diode forward voltage

VFC

IFC = 150 A, VGE = 0 V, Tj = 25 °C

-

IFC = 150 A, VGE = 0 V, Tj = 125 °C

-

Reverse recovery time, chopper

trrC

IFC = 150 A, VR = -600 V, VGE = 0 V

diF/dt = -1500 A/µs, Tj = 125 °C

-

Reverse recovery charge, chopper

QrrC

IFC = 150 A, VR = -600 V, VGE = 0 V

diF/dt = -1500 A/µs

Tj = 25 °C

-

Tj = 125 °C

-

V

2.3

2.8

1.8

-

µs

0.4

-

µC

5

-

18

-

Semiconductor Group

4

Mar-29-1996

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