C67076-A2012-A70 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

C67076-A2012-A70

IGBT Power Module

Siemens AG 

BSM 100 GAL 120 DN2

IGBT Power Module

• Single switch with chopper diode

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

VCE IC

Package

Ordering Code

BSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

RGE = 20 kΩ

Gate-emitter voltage

DC collector current

TC = 25 °C

TC = 80 °C

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 80 °C

Power dissipation per IGBT

TC = 25 °C

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

VCE

VCGR

VGE

IC

ICpuls

Ptot

Tj

Tstg

RthJC

RthJCD

RTHJCDC

Vis

-

-

-

-

Values

Unit

1200

V

1200

± 20

A

150

100

300

200

W

800

+ 150

°C

-55 ... + 150

≤ 0.16

K/W

≤ 0.3

≤ 0.25

2500

Vac

20

mm

11

F

-

55 / 150 / 56

Semiconductor Group

1

Mar-29-1996

Share Link: