BS 107
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 125
K/W
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
200
-
-
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
0.8
1.5
2
Zero gate voltage drain current
IDSS
VDS = 200 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
µA
VDS = 200 V, VGS = 0 V, Tj = 125 °C
-
2
60
VDS = 130 V, VGS = 0 V, Tj = 25 °C
-
-
30
nA
VDS = 70 V, VGS = 0.2 V, Tj = 25 °C
-
-
1
µA
Gate-source leakage current
IGSS
nA
VGS = 20 V, VDS = 0 V
-
1
10
Drain-Source on-state resistance
RDS(on)
Ω
VGS = 4.5 V, ID = 0.12 A
-
14
26
VGS = 2.8 V, ID = 0.02 A
-
14.5
28
Semiconductor Group
2
12/05/1997