BM29F040 Ver la hoja de datos (PDF) - Fujitsu

Número de pieza

componentes Descripción

Fabricante

BM29F040

FLASH MEMORY CMOS 4M (512K ×8) BIT

Fujitsu 

MBM29F040C-55/-70/-90

s LOGIC SYMBOL

19

A0 to A18

8

DQ0 to DQ7

CE

OE

WE

Table 1 MBM29F040C Pin Configuration

Pin

Function

A0 to A18

Address Inputs

DQ0 to DQ7

Data Inputs/Outputs

CE

Chip Enable

OE

Output Enable

WE

Write Enable

VSS

Device Ground

VCC

Device Power Supply

Table 2 MBM29F040C User Bus Operations

Operation

CE OE WE A0

A1

A6

A9

I/O

Auto-Select Manufacturer Code (1)

L

L

H

L

L

L

VID

Code

Auto-Select Device Code (1)

L

L

H

H

L

L

VID

Code

Read (3)

L

L

H

A0

A1

A6

A9

DOUT

Standby

H

X

X

X

X

X

X HIGH-Z

Output Disable

L

H

H

X

X

X

X HIGH-Z

Write (Program/Erase)

L

H

L

A0

A1

A6

A9

DIN

Enable Sector Protection (2)

L

VID

X

X

X

VID

X

Verify Sector Protection (2)

L

L

H

L

H

L

VID

Code

Legend: L = VIL, H = VIH, X = VIL or VIH, = Pulse Input. See DC Characteristics for voltage levels.

Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See

Table 5.

2. Refer to the section on Sector Protection.

3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

7

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