MBM29F040C Ver la hoja de datos (PDF) - Fujitsu

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MBM29F040C

FLASH MEMORY CMOS 4M (512K ×8) BIT

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

4M (512K × 8) BIT

DS05-20842-4E

MBM29F040C-55/-70/-90

s FEATURES

• Single 5.0 V read, program and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard byte-wide pinouts

32-pin PLCC (Package suffix: PD)

32-pin TSOP(I) (Package suffix: PF)

32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

• Minimum 100,000 write/erase cycles

• High performance

55 ns maximum access time

• Sector erase architecture

8 equal size sectors of 64K bytes each

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Embedded Erase™ Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program™ Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Low VCC write inhibit ≤ 3.2 V

• Sector protection

Hardware method disables any combination of sectors from write or erase operations

• Erase Suspend/Resume

Suspends the erase operation to allow a read data in another sector within the same device

Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.

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