BFR92AW Ver la hoja de datos (PDF) - NXP Semiconductors.

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Fabricante

BFR92AW

NPN 5 GHz wideband transistor

NXP Semiconductors. 

NXP Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFR92AW

FEATURES

• High power gain

• Gold metallization ensures

excellent reliability

• SOT323 (S-mini) package.

APPLICATIONS

It is designed for use in RF amplifiers,

mixers and oscillators with signal

frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated

in a plastic SOT323 (S-mini) package.

The BFR92AW uses the same crystal

as the SOT23 version, BFR92A.

PINNING

PIN

DESCRIPTION

1 base

2 emitter

3 collector

handbook, 2 columns

3

1

2

Top view

MBC870

Marking code: P2.

Fig.1 SOT323

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

IC

Ptot

hFE

Cre

fT

GUM

F

Tj

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

current gain

feedback capacitance

transition frequency

maximum unilateral power

gain

noise figure

junction temperature

open emitter

open base

up to Ts = 93 °C; note 1

IC = 15 mA; VCE = 10 V

IC = 0; VCE = 10 V; f = 1 MHz;

Tamb = 25 °C

IC = 15 mA; VCE = 10 V; f = 500 MHz

IC = 15 mA; VCE = 10 V; f = 1 GHz;

Tamb = 25 °C

IC = 15 mA; VCE = 10 V; f = 2 GHz;

Tamb = 25 °C

IC = 5 mA; VCE = 10 V; f = 1 GHz;

Γs = Γopt

Note

1. Ts is the temperature at the soldering point of the collector pin.

MIN.

−

−

−

−

65

−

TYP.

−

−

−

−

90

0.35

MAX.

20

15

25

300

135

−

UNIT

V

V

mA

mW

pF

3.5

5

−

−

14

−

GHz

dB

−

8

−

dB

−

2

−

dB

−

−

150 °C

Rev. 03 - 12 March 2008

2 of 13

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