BFQ67 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BFQ67 Datasheet PDF : 12 Pages
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NXP Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
alfpage
3
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MSB003
Marking code: V2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
fT
GUM
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
Ts 97 C; note 1
IC = 15 mA; VCE = 5 V
IC = 15 mA; VCE = 8 V
IC = 15 mA; VCE = 8 V; f = 1 GHz
IC = 5 mA; VCE = 8 V; f = 1 GHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
CONDITIONS
open emitter
open base
open collector
Ts 97 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
60
TYP.
100
8
14
MAX. UNIT
20
V
10
V
50
mA
300 mW
GHz
dB
1.3
dB
MIN.
65
MAX.
20
10
2.5
50
300
+150
175
UNIT
V
V
V
mA
mW
C
C
1998 Aug 27
2
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