BF599 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BF599

NPN Silicon RF Transistor

Siemens AG 

BF 599

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector cutoff current

VCB = 20 V, IE = 0

DC current gain

IC = 7 mA, VCE = 10 V

Collector-emitter saturation voltage

IC = 10 mA, IB = 1 mA

Base-emitter voltage

IC = 7 mA, VCE = 10 V

AC Characteristics

Transition frequency

IC = 5 mA, VCE = 10 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, VBE = 0 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, VBE = 0 V, f = 1 MHz

Optimum power gain

IC = 7 mA, VCE = 10 V, f = 35 MHz

Forward transfer admittance

IC = 7 mA, VCE = 10 V, f = 35 MHz

Symbol

Values

Unit

min. typ. max.

V(BR) CE0 25

ICB0

–

hFE

38

VCE sat

–

VBE

–

–

–

V

–

100 nA

70 –

–

0.15 –

V

0.78 –

fT

–

Ccb

–

Cce

–

Gpe opt

–

I y21e I –

550 –

0.35 –

0.68 –

43 –

175 –

MHz

pF

dB

mS

Semiconductor Group

2

Share Link: