BF543 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BF543

Silicon N Channel MOS FET Triode

Siemens AG 

Gate 1 transconductance y21s

VDS = 10 V, IDSS = 4 mA, VGS = 0

(source circuit)

BF 543

Output admittance y22s

VDS = 10 V, IDSS = 10 mA, VGS = 0

(source circuit)

Test circuit for power gain Gp and noise figure F

f= 200 MHz, GG = 2 mS, GL = 0.5 mS

Semiconductor Group

5

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