BD675 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
BD675 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darligton Power Transistors
Product Specification
BD675/BD677/BD679
DESCRIPTION
·
·With TO-126 package
·Complement to type BD676/678/680
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
BD675
VCBO
Collector-base voltage BD677
BD679
BD675
VCEO
Collector-emitter voltage BD677
BD679
VEBO
Emitter -base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
45
60
80
45
60
80
5
4
7
0.1
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
100
3.12
UNIT
K/W
K/W
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