BD135 Ver la hoja de datos (PDF) - Transys Electronics Limited

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Fabricante

BD135

TO-126 Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-126 Plastic-Encapsulated Transistors

BD135/BD137/BD139 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1.25 W (Tamb=25℃)

Collector current

ICM:

1.5 A

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

BD135

45

Collector-base breakdown voltage

V(BR)CBO

Ic=100µA, IE=0

BD137

60

BD139

80

BD135

45

Collector-emitter breakdown voltage V(BR)CEO

Ic=30mA, IB=0

BD137

60

BD139

80

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

V(BR)EBO

IE=100µA, IC=0

5

ICBO

VCB=30V, IE=0

IEBO

VEB=5V, IC=0

hFE(1)

VCE=2V, IC=5mA

25

BD135

40

hFE(2) VCE=2V, IC=150mA

BD137/BD139 40

hFE(3)

VCE=2V, IC=500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

Base-emitter voltage

VBE

VCE=2V, IC=500mA

TYP

MAX UNIT

V

V

V

0.1 µA

10 µA

250

160

0.5 V

1

V

CLASSIFICATION OF hFE(2)

Rank

Range

6

40-100

10

63-160

16

100-250

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