BCR16PM-12LG-A8 Ver la hoja de datos (PDF) - Renesas Electronics
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BCR16PM-12LG-A8 Datasheet PDF : 8 Pages
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BCR16PM-12LG
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Gate trigger voltageNote2
Gate trigger curentNote2
VFGT
VRGT
VRGT
IFGT
IRGT
IRGT
Min.
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
30
30
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 25 A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
VGD
0.2/0.1
—
Rth (j-c)
—
—
(dv/dt)c 10/1
—
—
V
Tj = 125C/150C, VD = 1/2 VDRM
3.5
C/W Junction to caseNote3
—
V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0112EJ0300 Rev.3.00
Sep 13, 2010
Page 2 of 7
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