BCP52 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
BCP52 Datasheet PDF : 4 Pages
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Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
0.8
0.6
0.4
1
- 40 ºC
25 °C
125 ºC
10
100
I C - COLLECTOR CURRENT (mA)
P 78
1000
Collector-Cutoff Current
vs Ambient Temperature
100
VCB = 40V
10
1
0.1
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (ºC)
P8
Gain Bandwidth Product
vs Collector Current
250
V CE = 10V
200
150
100
50
0
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1
- 40 ºC
25 °C
125 ºC
VCE = 5V
10
100
I C - COLLECTOR CURRENT (mA)
P8
1000
Collector-Base Capacitance
vs Collector-Base Voltage
40
F = 1.0 MHz
30
20
10
0
0
4
8
12
16
20
24
28
V CB- COLLECTOR-BASE VOLTAGE (V)
Pr 78
1.5
1.25
1
0.75
0.5
0.25
0
0
Power Dissipation vs
Ambient Temperature
SOT-223
25
50
75
100
125
150
TEMPERATURE (o C)
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