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BC859BW Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859W; BC860W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBE
emitter cut-off current
DC current gain
BC859W; BC860W
BC859BW; BC860BW
BC859CW; BC860CW
collector-emitter saturation
voltage
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −2 mA; VCE = −5 V;
see Figs 2 and 3
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −500 mV; f = 1 MHz
IC = −10 mA; VCE = −5 V; f = 100 MHz
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
220
220
420
−
−
600
−
−
−
100
−
−
TYP. MAX. UNIT
−
−15 nA
−
−4 μA
−
−100 nA
−
800
−
475
−
800
−
−300 mV
−
−650 mV
−
750 mV
−
820 mV
−
5
pF
10 −
pF
−
−
MHz
−
4
dB
−
4
dB
1999 Apr 12
3
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