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BC859BW Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859W; BC860W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
TYPE
NUMBER
BC859W
BC859BW
BC859CW
MARKING
CODE
4D∗
4B∗
4C∗
TYPE
NUMBER
BC860W
BC860BW
BC860CW
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING
CODE
4H∗
4F∗
4G∗
handbook, halfpage
3
3
1
1
Top view
2
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC859W
BC860W
collector-emitter voltage
BC859W
BC860W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
−30
V
−
−50
V
−
−30
V
−
−45
V
−
−5
V
−
−100
mA
−
−200
mA
−
−200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 12
2
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