BC857BV Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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componentes Descripción

Fabricante

BC857BV

DUAL TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

DUAL TRANSISTOR (PNP)

BC857BV

FEATURES

z Epitaxial Die Construction

z Complementary NPN Types Available

(BC847BV)

z Ultra-Small Surface Mount Package

SOT-563

Marking: K5V

MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

Symbol

Parameter

Value

VCBO

Collector-Base Voltage

-50

VCEO

Collector-Emitter Voltage

-45

VEBO

Emitter-Base Voltage

-5

IC

Collector Current -Continuous

-0.1

PC

Collector Power Dissipation

0.15

RθJA

Thermal Resistance. Junction to Ambient Air

833

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55 to +150

Units

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO IC=-10μA,IE=0

-50

Collector-emitter breakdown voltage

V(BR)CEO IC=-10mA,IB=0

-45

Emitter-base breakdown voltage

V(BR)EBO IE=-1μA,IC=0

-5

Collector cut-off current

ICBO

VCB=-30V,IE=0

DC current gain

hFE

VCE=-5V,IC=-2mA

220

Collector-emitter saturation voltage

VCE(sat)(1) IC=-10mA,IB=-0.5mA

VCE(sat)(2) IC=-100mA,IB=-5mA

Base-emitter saturation voltage

VBE(sat)(1) IC=-10mA,IB=-0.5mA

VBE(sat)(2) IC=-100mA,IB=-5mA

Base-emitter voltage

VBE(1) VCE=-5V,IC=-2mA

-0.6

VBE(2) VCE=-5V,IC=-10mA

Transition frequency

fT

VCE=-5V,IC=-10mA,f=100MHz

100

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Noise figure

VCE=-5V,Ic=-0.2mA,

NF

f=1kHZ,Rs=2KΩ,BW=200Hz

1

JinYu

semiconductor

www.htsemi.com

TYP MAX UNIT

V

V

V

-15

nA

475

-0.1

V

-0.4

V

-0.7

V

-0.9

V

-0.75 V

-0.82 V

MHz

4.5

pF

10

dB

Date:2011/ 05

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