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BC856AWT1

General Purpose Transistors (PNP Silicon)

ON Semiconductor 

BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min

ON CHARACTERISTICS

DC Current Gain

(IC = –10 µA, VCE = –5.0 V)

BC856A, BC857A, BC585A

BC856A, BC857A, BC858A

BC858C

hFE

—

—

—

(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC857A, BC858A

BC856B, BC857B, BC858B

BC858C

Collector – Emitter Saturation Voltage

(IC = –10 mA, IB = –0.5 mA)

(IC = –100 mA, IB = –5.0 mA)

Base – Emitter Saturation Voltage

(IC = –10 mA, IB = –0.5 mA)

(IC = –100 mA, IB = –5.0 mA)

Base – Emitter On Voltage

(IC = –2.0 mA, VCE = –5.0 V)

(IC = –10 mA, VCE = –5.0 V)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)

Output Capacitance

(VCB = –10 V, f = 1.0 MHz)

Noise Figure

(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,

f = 1.0 kHz, BW = 200 Hz)

125

220

420

VCE(sat)

—

—

VBE(sat)

—

—

VBE(on)

–0.6

—

fT

100

Cob

—

NF

—

Typ

Max Unit

90

—

—

150

—

270

—

180

250

290

475

520

800

V

—

–0.3

—

–0.65

V

–0.7

—

–0.9

—

V

—

–0.75

—

–0.82

—

—

MHz

—

4.5

pF

—

10

dB

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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