BC859 Ver la hoja de datos (PDF) - General Semiconductor
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BC859 Datasheet PDF : 6 Pages
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BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 2 mA
Current Gain Group A
B
C
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
Base Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 mA
Collector-Emitter Cutoff Current
at –VCE = 80 V
at –VCE = 50 V
at –VCE = 30 V
at –VCE = 80 V, Tj = 125 °C
at –VCE = 50 V, Tj = 125 °C
at –VCE = 30 V, Tj = 125 °C
at –VCB = 30 V
at –VCB = 30 V, Tj = 150 °C
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz
1) Device on fiberglass substrate, see layout
Symbol
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
hFE
hFE
hFE
hFE
hFE
hFE
RthSB
RthJA
–VCEsat
–VCEsat
–VBEsat
–VBEsat
–VBE
–VBE
–ICES
–ICES
–ICES
–ICES
–ICES
–ICES
–ICBO
–ICBO
fT
Min.
–
–
–
1.6
3.2
6
–
–
–
–
–
–
–
–
–
110
200
420
–
–
–
–
–
–
600
–
–
–
–
–
–
–
–
–
–
Typ.
Max.
220
–
330
–
600
–
2.7
4.5
4.5
8.5
8.7
15
18
30
30
60
60
110
1.5 · 10–4 –
2 · 10–4
–
3 · 10–4
–
90
–
150
–
270
–
180
220
290
450
520
800
–
3201)
–
4501)
90
300
250
650
700
–
900
–
660
750
–
800
0.2
15
0.2
15
0.2
15
–
4
–
4
–
4
–
15
–
5
150
–
Unit
–
–
–
kΩ
kΩ
kΩ
µS
µS
µS
–
–
–
–
–
–
–
–
–
K/W
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
nA
µA
MHz
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