BC859A Ver la hoja de datos (PDF) - General Semiconductor
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BC859A Datasheet PDF : 6 Pages
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BC856 THRU BC859
Small Signal Transistors (PNP)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
1
2
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
♦ Especially suited for automatic insertion in
thick- and thin-film circuits.
♦ These transistors are subdivided into three groups A, B
and C according to their current gain. The type BC856 is
available in groups A and B, however, the types BC857,
BC858 and BC859 can be supplied in all three groups.
The BC859 is a low noise type.
♦ As complementary types, the NPN transistors
BC846 … BC849 are recommended.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
Type
BC856A
B
BC857A
B
C
BC858A
B
C
Marking
3A
3B
3E
3F
3G
3J
3K
3L
Type
BC859A
B
C
Marking
4A
4B
4C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at TSB = 50 °C
Junction Temperature
Storage Temperature Range
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Symbol
–VCBO
–VCBO
–VCBO
–VCES
–VCES
–VCES
–VCEO
–VCEO
–VCEO
–VEBO
–IC
–ICM
–IBM
IEM
Ptot
Tj
TS
Value
Unit
80
V
50
V
30
V
80
V
50
V
30
V
65
V
45
V
30
V
5
V
100
mA
200
mA
200
mA
200
mA
3101)
mW
150
°C
– 65 to +150
°C
4/98
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