BC856S(2004) Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza

componentes Descripción

Fabricante

BC856S
(Rev.:2004)

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

BC856S ... BC858S

Characteristics (Tj = 25/C)

Collector saturation volt. – Kollektor-Sättigungsspag. 1)

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

-VCEsat

-VCEsat

Base saturation voltage – Basis-Sättigungsspannung 1)

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

- VBEsat

- VBEsat

Base-Emitter voltage – Basis-Emitter-Spannung 1)

- VCE = 5 V, - IC = 2 mA

- VCE = 5 V, - IC = 10 mA

- VBEon

- VBEon

Collector-Base cutoff current – Kollektorreststrom

IE = 0, - VCB = 30 V

IE = 0, - VCB = 30 V, Tj = 150/C

- ICB0

- ICB0

Emitter-Base cutoff current – Emitterreststrom

IC = 0, - VEB = 5 V

- IEB0

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 :A

RG = 2 kS, f = 1 kHz, )f = 200 Hz

F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Min.

–

–

–

–

600 mV

–

–

–

–

100 MHz

–

–

RthA

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Pinning – Anschlußbelegung

654

Kennwerte (Tj = 25/C)

Typ.

Max.

90 mV 250 mV

200 mV 600 mV

700 mV

–

900 mV

–

650 mV 750 mV

–

820 mV

–

15 nA

–

5 :A

–

100 nA

–

–

–

6 pF

2 dB

10 dB

420 K/W 2)

BC846S ... BC848S

T1

T2

1

2

3

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

19

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