BC856A Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BC856A Datasheet PDF : 9 Pages
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BC856 to BC859
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector - base voltage
Collector - emitter voltage
(base shorted)
Collector - emitter voltage
(base open)
Emitter - base voltage
Collector current
Peak colector current
Peak base current
Peak emitter current
Power dissipation
Tamb = 25 °C
1) Device on fiberglass substrate, see layout on third page.
VISHAY
Part
Symbol
Value
Unit
BC856
- VCBO
80
V
BC857
- VCBO
50
V
BC858
- VCBO
30
V
BC859
- VCBO
30
V
BC856
- VCES
80
V
BC857
- VCES
50
V
BC858
- VCES
30
V
BC859
- VCES
30
V
BC856
- VCEO
65
V
BC857
- VCEO
45
V
BC858
- VCEO
30
V
BC859
- VCEO
30
V
- VEBO
5
V
- IC
100
mA
- ICM
200
mA
- IBM
200
mA
IEM
200
mA
Ptot
3101)
mW
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Thermal resistance junction to
substrate backside
Junction temperature
Test condition
Storage temperature range
1) Device on fiberglass substrate, see layout on third page.
Symbol
RθJA
RθSB
Tj
TS
Value
3201)
4501)
150
- 65 to + 150
Unit
°C/W
°C/W
°C
°C
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
Min
Small signal current gain
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
(current gain group A)
Small signal current gain
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
(current gain group B)
Small signal current gain
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
(current gain group C)
Input impedance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
group A)
hie
1.6
Input impedance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
group B)
hie
3.2
Input impedance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
group C)
hie
6
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
hoe
group A)
www.vishay.com
2
Typ
Max
Unit
220
330
600
2.7
4.5
kΩ
4.5
8.5
kΩ
8.7
15
kΩ
18
30
µS
Document Number 85135
Rev. 1.2, 08-Sep-04
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