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BC847CDW1T1

NPN Duals Dual General Purpose Transistors

E-Tech Electronics LTD 

BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I C = 10 mA)

BC846 Series

BC847 Series

V (BR)CEO

65

45

BC848 Series

30

Collector–Emitter Breakdown Voltage

(I C = 10 µA, V EB = 0)

BC846 Series

BC847 Series

V (BR)CES

80

50

BC848 Series

30

Collector–Base Breakdown Voltage

(I C = 10 µA)

BC846 Series

BC847 Series

V (BR)CBO

80

50

BC848 Series

30

Emitter–Base Breakdown Voltage

(I E = 1.0 µA)

BC846 Series

BC847 Series

V (BR)EBO

6.0

6.0

BC848 Series

5.0

Collector Cutoff Current

(V CB = 30 V)

I CBO

—

(V CB = 30 V, T A = 150°C)

—

Typ

Max

Unit

V

—

—

—

—

—

—

V

—

—

—

—

—

—

V

—

—

—

—

—

—

V

—

—

—

—

—

—

—

15

nA

—

5.0

µA

ON CHARACTERISTICS

DC Current Gain

h FE

(I C = 10 µA, V CE = 5.0 V)

BC846B, BC847B, BC848B

BC847C, BC848C

—

—

150

—

—

270

—

(I C = 2.0 mA, V CE = 5.0 V)

BC846B, BC847B, BC848B

BC847C, BC848C

200

290

450

420

520

800

Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat)

—

—

0.25

V

Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA)

—

—

0.6

Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)

V BE(sat)

—

0.7

—

V

Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)

—

0.9

—

Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)

V BE(on)

580

660

700

mV

Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)

—

—

770

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)

Output Capacitance (V CB = 10 V, f = 1.0 MHz)

Noise Figure (I C = 0.2 mA,

V CE = 5.0 V dc, R S = 2.0 kΩ, BC846B, BC847B, BC848B

f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C

fT

C obo

NF

100

—

—

MHz

—

—

4.5

pF

dB

—

—

10

—

—

4.0

BC846b–2/5

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