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BC846

SWITCHING AND AMPLIFIER APPLICATION

Unisonic Technologies 

BC846-BC850

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

VALUE

UNIT

BC846

80

V

Collector-Base Voltage

BC847 / BC850

VCBO

50

V

BC848 / BC849

30

V

BC846

65

V

Collector-Emitter Voltage BC847 / BC850

VCEO

45

V

BC848 / BC849

30

V

BC846 / BC847

6

V

Emitter-Base Voltage

BC848 / BC849 / BC850

VEBO

5

V

Collector Current (DC)

IC

SOT-23

100

mA

310

mW

Collector Dissipation

SOT-323

PD

SOT-523

200

mW

150

mW

Junction Temperature

Storage Temperature

TJ

TSTG

+150

°C

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Collector-Base Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Input Capacitance

BC846/BC847/BC848

BC849/BC850

Noise Figure

BC849

BC850

SYMBOL

TEST CONDITIONS

ICBO VCB=30V, IE=0

hFE VCE=5.0V, IC=2.0mA

VCE(SAT)

IC=10mA, IB=0.5mA

IC=100mA,IB=5.0mA

VBE(SAT)

IC=10mA, IB=0.5mA

IC=100mA,IB=5.0mA

VBE(ON)

VCE=5.0V, IC=2.0mA

VCE=5.0V, IC=10mA

fT VCE=5.0V, IC=10mA, f=100MHz

COB VCB=10V, IE=0, f=1.0MHz

CIB VEB=0.5V, IC=0, f=1.0MHz

VCE=5V, IC=200μA,

NF f=1KHz, RG=2KΩ

VCE=5V, IC=200μA,

RG=2KΩ, f=30~15000Hz

„ CLASSIFICATION OF hFE

MIN TYP MAX UNIT

15 nA

110

800

90 250 mV

200 600 mV

700

mV

900

mV

580 660 700 mV

720 mV

300

MHz

3.5 6 pF

9

pF

2 10 dB

1.2 4 dB

1.4 4 dB

1.4 3 dB

RANK

RANGE

A

110-220

B

200-450

C

420-800

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-027,G

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