BC846 Ver la hoja de datos (PDF) - General Semiconductor
Número de pieza
componentes Descripción
Fabricante
BC846 Datasheet PDF : 6 Pages
| |||
BC846 THRU BC849
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
DC Current Gain
at VCE = 5 V, IC = 10 µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
Collector-Emitter Cutoff Current
at VCE = 80 V
at VCE = 50 V
at VCE = 30 V
at VCE = 80 V, Tj = 125 °C
at VCE = 50 V, Tj = 125 °C
at VCE = 30 V, Tj = 125 °C
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
1) Device on fiberglass substrate, see layout
Symbol
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
hFE
hFE
hFE
hFE
hFE
hFE
RthSB
RthJA
VCEsat
VCEsat
VBEsat
VBEsat
VBE
VBE
ICES
ICES
ICES
ICES
ICES
ICES
fT
Min.
–
–
–
1.6
3.2
6
–
–
–
–
–
–
–
–
–
110
200
420
–
–
–
–
–
–
580
–
–
–
–
–
–
–
–
Typ.
Max.
220
–
330
–
600
–
2.7
4.5
4.5
8.5
8.7
15
18
30
30
60
60
110
1.5 · 10–4 –
2 · 10–4
–
3 · 10–4
–
90
–
150
–
270
–
180
220
290
450
520
800
–
3201)
–
4501)
90
250
200
600
700
–
900
–
660
700
–
720
0.2
15
0.2
15
0.2
15
–
4
–
4
–
4
300
–
Unit
–
–
–
kΩ
kΩ
kΩ
µS
µS
µS
–
–
–
–
–
–
–
–
–
K/W
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
MHz
Share Link: 