BC807 Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

BC807

TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

TRANSISTOR (PNP)

BC807-16

BC807-25

BC807-40

FEATURES

·Ldeally suited for automatic insertion

·epitaxial planar die construction

·complementary NPN type available(BC817)

BC08 7

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: 807-16:5A; 807-25:5B; 807-40:5C

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.5

A

PC

Collector Power Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol Test conditions

VCBO IC= -10μA, IE=0

VCEO IC= -10mA, IB=0

VEBO

IE= -1μA, IC=0

ICBO

VCB= -45V, IE=0

MIN

-50

-45

-5

Collector cut-off current

ICEO

VCE= -40V, IB=0

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

IEBO

VEB= -4 V, IC=0

807-16

807-25

807-40

hFE(1)

100

VCE= -1V, IC= -100mA 160

250

VCE(sat) IC=-500mA, IB= -50mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC= -500mA, IB= -50mA

fT

VCE= -5V, IC= -10mA

100

f=100MHz

MAX UNIT

V

V

V

-0.1 μA

-0.2 μA

-0.1 μA

250

400

600

-0.7 V

-1.2 V

MHz

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

Share Link: