BC327(Old_V) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

BC327
(Rev.:Old_V)

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR

PARAMETER

Base-emitter on voltage

Current gain bandwidth product

Output Capacitance

SYMBOL

VBE(on)

fT

Cob

TEST CONDITIONS

MIN TYP MAX UNIT

VCE=-1V, Ic=-300mA

-1.2 V

VCE=-5V, Ic=-10mA, f=20MHz

100

MHz

VCB=-10V, IE=0, f=1MHz

12

pF

CLASSIFICATION OF hFE

RANK

hFE1

hFE2

16

100-250

60~

25

160-400

100~

40

250-630

170~

UTC UNISONIC TECHNOLOGIES CO., LTD. 2

QW-R201-038,A

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