BAW101(2003) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BAW101
(Rev.:2003)

Silicon Switching Diode

Infineon Technologies 

BAW101...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I(BR) = 100 µA

V(BR)

300 -

-V

Reverse current

VR = 250 V

VR = 250 V, TA = 150 °C

IR

µA

-

- 0.15

-

-

50

Forward voltage

IF = 100 mA

VF

-

-

1.3 V

AC Characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

CT

-

6

- pF

Reverse recovery time

trr

IF = 10 mA, IR = 10 mA, measured at IR = 1mA,

RL = 100 Ω

-

1

- µs

Test circuit for reverse recovery time

D.U.T.

Oscillograph

ΙF

Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns,

Ri = 50Ω

Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF

EHN00019

2

Sep-24-2003

Share Link: