BAW101(2003) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BAW101 Datasheet PDF : 3 Pages
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Silicon Switching Diode
• Electrically insulated high-voltage
medium-speed diodes
BAW101...
BAW101
4
D1
3
D2
1
2
Type
BAW101
Package
SOT143
Configuration
parallel
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Peak reverse voltage
VRM
Forward current
IF
Peak forward current
IFM
Surge forward current, t = 1 µs
IFS
Total power dissipation
Ptot
TS ≤ 35°C
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
BAW101
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
JPs
Value
Unit
300
V
300
250
mA
500
4.5
A
350
mW
150
°C
-65 ... 150
Value
Unit
≤ 330
K/W
1
Sep-24-2003
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