APT1001RBN Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza

componentes Descripción

Fabricante

APT1001RBN

POWER MOS IV®

Advanced Power Technology  

60

OPERATION HERE

LIMITED BY RDS (ON)

10

10µS

100µS

1mS

1

TC =+25°C

TJ =+150°C

SINGLE PULSE

10mS

100mS

DC

APT901RBN

APT1001RBN

.1 1

5 10

50 100

1000

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

20

ID = ID [Cont.]

16

VDS=100V

12

VDS=200V

VDS=500V

8

4

0

0

40

80 120 160 200

Qg, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

10,000

1,000

100

APT1001RBN

Ciss

Coss

Crss

10

0

10

20

30

40

50

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

100

50

20 TJ = +150°C

10

5

TJ = +25°C

2

1

0

.5

1.0

1.5

2.0

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247AD Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

15.49 (.610)

16.26 (.640)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

0.40 (.016)

0.79 (.031)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate

Drain

Source

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