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Número de pieza
componentes Descripción
BAS316 Ver la hoja de datos (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
Número de pieza
componentes Descripción
Fabricante
BAS316
Silicon Epitaxial Planar Diodes
Shenzhen Luguang Electronic Technology Co., Ltd
BAS316 Datasheet PDF : 3 Pages
1
2
3
BAS316
Silicon Epitaxial Planar
Diodes
ELECTRICAL CHARACTERISTICS
@ Ta=2
5℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Symbol
V
(BR)R
V
F
Reverse Current
I
R
Capacitance between terminals C
T
Reverse Recovery Time
t
rr
Min
100
0.62
-
-
-
Max Unit
-
V
0.715 V
0.855
1.0
1.25
1.0
μ
A
0.03
1.5
pF
4.0
ns
Test Condition
I
R
=100
μ
A
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=25V
V
R
=0,f=1.0MHz
I
F
=I
R
=10mA,R
L
=100
Ω
TYPICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
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mail:lge@luguang.cn
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