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BAS32L,115 Datasheet PDF : 11 Pages
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Nexperia
BAS32L
High-speed switching diode
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb = 25 °C
[1] -
-
−65
−65
Max
500
200
+200
+200
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge.
Unit
mW
°C
°C
°C
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max
[1] -
-
350
-
-
300
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
VF
forward voltage
IF = 5 mA
620 -
IF = 100 mA
-
-
IF = 100 mA; Tj = 100 °C
-
-
IR
reverse current
VR = 20 V
-
-
VR = 75 V
-
-
VR = 20 V; Tj = 150 °C
-
-
VR = 75 V; Tj = 150 °C
-
-
Cd
diode capacitance VR = 0 V; f = 1 MHz
-
-
trr
reverse recovery
time
[1] -
-
VFR
forward recovery
voltage
[2] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 50 mA; tr = 20 ns.
Max
750
1 000
930
25
5
50
100
2
4
2.5
Unit
mV
mV
mV
nA
μA
μA
μA
pF
ns
V
BAS32L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 20 January 2011
© Nexperia B.V. 2017. All rights reserved
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