BAS32L,115(2008) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAS32L,115 Datasheet PDF : 10 Pages
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NXP Semiconductors
BAS32L
High-speed switching diode
300
IF
(mA)
200
100
mbg451
600
IF
(mA)
400
200
mbg464
(1)
(2)
(3)
0
0
100
Tamb (°C)
200
FR4 PCB, standard footprint
Fig 1. Forward current as a function of ambient
temperature; derating curve
102
IFSM
(A)
10
mbg704
0
0
1
VF (V)
2
(1) Tj = 175 °C; typical values
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward
voltage
103
IR
(µA)
102
mgd006
(1)
(2)
(3)
10
1
1
10−1
10−1
1
10
102
103
104
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge
Fig 3. Non-repetitive peak forward current as a
function of pulse duration; maximum values
10−2
0
100
Tj (°C)
200
(1) VR = 75 V; maximum values
(2) VR = 75 V; typical values
(3) VR = 20 V; typical values
Fig 4. Reverse current as a function of junction
temperature
BAS32L_6
Product data sheet
Rev. 06 — 29 October 2008
© NXP B.V. 2008. All rights reserved.
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